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| DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES * Excellent linearity * Extremely low noise * Excellent return loss properties * Rugged construction * Gold metallization ensures excellent reliability. APPLICATIONS * CATV systems operating in the 40 to 870 MHz frequency range. handbook, halfpage CGD914; CGD914MI PINNING - SOT115J DESCRIPTION PIN CGD914 1 2 and 3 5 7 and 8 9 input common +VB common output CGD914MI output common +VB common input DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies. Both modules are electrically identical, only the pinning is different. 1 2 3 5 7 8 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 19.75 20.2 345 MAX. 20.25 21.5 375 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi supply voltage RF input voltage single tone 132 channels flat Tstg Tmb storage temperature operating mounting base temperature PARAMETER - - - - -40 -20 MIN. - 70 45 +100 +100 dBmV dBmV C C MAX. 30 V UNIT 2001 Nov 01 2 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 . SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz f = 45 to 100 MHz f = 100 to 800 MHz f = 800 to 870 MHz flatness narrow band s11 input return losses in each 6 MHz segment f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s21 s12 CTB phase response reverse isolation composite triple beat f = 50 MHz RFout to RFin 79 chs; fm = 445.25 MHz; note 1 112 chs; fm = 649.25 MHz; note 2 132 chs; fm = 745.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz Xmod cross modulation 79 chs; fm = 55.25 MHz; note 1 112 chs; fm = 55.25 MHz; note 2 132 chs; fm = 55.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz CONDITIONS CGD914; CGD914MI MIN. 19.75 20.2 0.2 -0.25 -0.6 -0.45 - 20 20 18 16 15 14 14 10 21 21 20 19 18 17 16 14 -45 - - - - - - - - - - - - - TYP. 20 21 1 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - MAX. 20.25 21.5 1.5 +0.25 +0.4 +0.2 0.1 - - - - - - - - - - - - - - - - +45 22 -76 -64 -55 -73 -64 -60 -70 -62 -57 -69 -65 -63 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dB dB dB dB dB dB dB dB dB 2001 Nov 01 3 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI SYMBOL PARAMETER CONDITIONS 79 chs; fm = 446.5 MHz; note 1 112 chs; fm = 746.5 MHz; note 2 132 chs; fm = 860.5 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz MIN. - - - - - - - - - - - - - - - - - - - 69 66 63 345 TYP. - - - - - - - - - - - - 2.5 2.5 2.6 3 - - - - - - 360 MAX. -71 -60 -56 -63 -54 -49 -59 -53 -48 -60 -59 -57 3 3 3.5 3.5 -60 -54 -50 - - - 375 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dBmV dBmV mA CSO Sum composite second order distortion (sum) CSO Diff composite second order distortion (diff) 79 chs; fm = 150 MHz; note 1 112 chs; fm = 150 MHz; note 2 132 chs; fm = 150 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 150 MHz 112 chs flat; Vo = 44 dBmV; fm = 150 MHz 132 chs flat; Vo = 44 dBmV; fm = 150 MHz NF noise figure f = 50 MHz f = 550 MHz f = 750 MHz f = 870 MHz d2 second order distortion note 4 note 5 note 6 Vo output voltage dim = -60 dB; note 7 dim = -60 dB; note 8 dim = -60 dB; note 9 Itot Notes total current consumption (DC) note 10 1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz. 3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz). 4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz. 5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz. 6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp + fq = 860.5 MHz. 7. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo -6 dB; fr = 549.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 538.25 MHz. 8. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo -6 dB; fr = 749.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 738.25 MHz. 9. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo -6 dB; fr = 860.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 849.25 MHz. 10. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 01 4 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -60 MCD976 52 Vo (dBmV) 48 handbook, halfpage -60 MCD977 52 Vo (dBmV) 48 CTB (dB) -70 (1) Xmod (dB) -70 (1) -80 44 -80 44 -90 (2) (3) (4) (2) 40 -90 40 (3) (4) -100 0 200 400 600 36 1000 800 f (MHz) -100 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.2 Composite triple beat as a function of frequency under tilted conditions. Fig.3 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -50 MCD978 52 Vo (dBmV) 48 handbook, halfpage -50 MCD979 54 (2) (1) (3) CSO (dB) -60 (1) CSO (dB) -60 Vo (dBmV) 50 (2) (3) -70 44 (4) 46 -70 (4) -80 40 42 -80 -90 38 -90 0 200 400 600 36 1000 800 f (MHz) -100 0 200 400 600 34 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.4 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.5 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2001 Nov 01 5 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -60 MCD980 48 Vo (dBmV) handbook, halfpage -60 MCD981 48 Vo (dBmV) CTB (dB) -70 (1) Xmod (dB) -70 (1) 44 44 (2) (2) -80 (3) (4) 40 -80 40 (3) -90 0 200 400 600 36 1000 800 f (MHz) -90 0 200 400 600 36 1000 800 f (MHz) (4) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.6 Composite triple beat as a function of frequency under flat conditions. Fig.7 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD982 48 Vo (dBmV) handbook, halfpage -50 MCD983 48 Vo (dBmV) CSO (dB) -60 (1) (2) (3) CSO (dB) -60 (2) (1) (3) 44 44 (4) -70 (4) 40 -70 40 -80 36 -80 36 -90 0 200 400 600 32 1000 800 f (MHz) -90 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.8 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.9 Composite second order distortion (diff) as a function of frequency under flat conditions. 2001 Nov 01 6 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -40 MCD984 52 Vo (dBmV) 48 handbook, halfpage -50 MCD985 52 Vo (dBmV) 48 CTB (dB) -50 (1) Xmod (dB) -60 (1) -60 44 -70 (2) 44 (2) -70 (3) (4) 40 -80 40 (3) -80 0 200 400 600 36 1000 800 f (MHz) -90 (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.10 Composite triple beat as a function of frequency under tilted conditions. Fig.11 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -50 MCD986 (1) (2) 52 Vo (dBmV) 48 handbook, halfpage -50 MCD987 52 Vo (dBmV) 48 (1) CSO (dB) -60 (3) CSO (dB) -60 (4) -70 44 -70 44 (2) -80 40 -80 (3) 40 -90 0 200 400 600 36 1000 800 f (MHz) -90 (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.12 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.13 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2001 Nov 01 7 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -50 MCD988 48 Vo (dBmV) handbook, halfpage -60 MCD989 48 Vo (dBmV) CTB (dB) -60 (1) Xmod (dB) -70 (1) (2) 44 44 (2) -70 (3) (4) 40 -80 (3) 40 -80 36 -90 (4) 36 -90 0 200 400 600 32 1000 800 f (MHz) -100 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.14 Composite triple beat as a function of frequency under flat conditions. Fig.15 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD990 (2) (3) (4) (1) 48 Vo (dBmV) 44 handbook, halfpage -50 MCD991 48 Vo (dBmV) CSO (dB) -60 CSO (dB) -60 (2) (1) (3) 44 -70 40 -70 (4) 40 -80 36 -80 36 -90 0 200 400 600 32 1000 800 f (MHz) -90 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.16 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.17 Composite second order distortion (diff) as a function of frequency under flat conditions. 2001 Nov 01 8 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -40 MCD992 52 Vo (dBmV) 48 handbook, halfpage -50 MCD993 52 Vo (dBmV) 48 CTB (dB) -50 (1) Xmod (dB) -60 (1) (2) -60 44 (3) (4) -70 (2) 44 (3) -70 40 -80 (4) 40 -80 0 200 400 600 36 1000 800 f (MHz) -90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.18 Composite triple beat as a function of frequency under tilted conditions. Fig.19 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -40 MCD994 52 Vo (dBmV) 48 handbook, halfpage -40 MCD995 52 (2) (1) (3) CSO (dB) -50 (1) CSO (dB) -50 Vo (dBmV) 48 (2) -60 44 -70 40 (4) 44 -60 (3) (4) 40 -70 -80 36 -80 0 200 400 600 36 1000 800 f (MHz) -90 0 200 400 600 32 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.20 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.21 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2001 Nov 01 9 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -40 MCD996 48 Vo (dBmV) handbook, halfpage -60 MCD997 48 Vo (dBmV) CTB (dB) -50 (1) Xmod (dB) -70 (1) (2) 44 44 -60 (2) (3) (4) 40 -80 (3) 40 -70 36 -90 (4) 36 -80 0 200 400 600 32 1000 800 f (MHz) -100 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.22 Composite triple beat as a function of frequency under flat conditions. Fig.23 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD998 (2) (3) (4) (1) 48 Vo (dBmV) 44 handbook, halfpage -40 MCD999 48 Vo (dBmV) CSO (dB) -60 CSO (dB) -50 (2) (1) 44 -70 40 -60 (3) 40 -80 36 -70 (4) 36 -90 0 200 400 600 32 1000 800 f (MHz) -80 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 . Fig.24 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.25 Composite second order distortion (diff) as a function of frequency under flat conditions. 2001 Nov 01 10 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier PACKAGE OUTLINE CGD914; CGD914MI Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8 mm 20.8 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 38.1 25.4 10.2 4.2 44.75 6-32 0.25 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-06 2001 Nov 01 11 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development CGD914; CGD914MI DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 2001 Nov 01 12 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES CGD914; CGD914MI 2001 Nov 01 13 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES CGD914; CGD914MI 2001 Nov 01 14 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES CGD914; CGD914MI 2001 Nov 01 15 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/06/pp16 Date of release: 2001 Nov 01 Document order number: 9397 750 08861 |
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